vs-20etf...fppbf series, vs-20etf...fp-m3 series www.vishay.com vishay semiconductors revision: 11-feb-16 1 document number: 93222 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fast soft recovery r ectifier diode, 20 a features ? glass passivated pellet chip junction ? 150 c max. operation junction temperature ? designed and qualified according to jedec ? -jesd 47 ? fully isolated package (v ins = 2500 v rms ) ? ul e78996 approved ? material categorization: ? for definitions of compliance please see www.vishay.com/doc?99912 applications these devices are intended for use in output rectification and freewheeling in inverters, choppers and converters as well as in input rectification where severe restrictions on conducted emi should be met. description the vs-20etf...fp... fast soft recovery rectifier series has been optimized for combined short reverse recovery time and low forward voltage drop. ? the glass passivation ensures st able reliable operation in the most severe te mperature and power cycling conditions. product summary package to-220fp i f(av) 20 a v r 1000 v, 1200 v v f at i f 1.31 v i fsm 320 a t rr 95 ns t j max. 150 c diode variation single die snap factor 0.6 2 1 cathode 3 anode to-220 full-pak 1 2 3 a v aila b le major ratings and characteristics symbol characteristics values units v rrm 1000 to 1200 v i f(av) sinusoidal waveform 20 a i fsm 320 t rr 1 a, 100 a/s 95 ns v f 20 a, t j = 25 c 1.31 v t j range -40 to +150 c voltage ratings part number v rrm , maximum peak reverse voltage v v rsm , maximum non-re petitive peak reverse voltage v i rrm at 150 c ma VS-20ETF10FPPBF, vs-20etf10fp-m3 1000 1100 6 vs-20etf12fppbf, vs-20etf12fp-m3 1200 1300 absolute maximum ratings parameter symbol test conditions values units maximum average forward current i f(av) t c = 50 c, 180 conduction half sine wave 20 a maximum peak one cycle ? non-repetitive surge current i fsm 10 ms sine pulse, rated v rrm applied 270 10 ms sine pulse, no voltage reapplied 320 maximum i 2 t for fusing i 2 t 10 ms sine pulse, rated v rrm applied 365 a 2 s 10 ms sine pulse, no voltage reapplied 515 maximum i 2 ? t for fusing i 2 ? t t = 0.1 ms to 10 ms, no voltage reapplied 5150 a 2 ? s
vs-20etf...fppbf series, vs-20etf...fp-m3 series www.vishay.com vishay semiconductors revision: 11-feb-16 2 document number: 93222 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 electrical specifications parameter symbol test conditions values units maximum forward voltage drop v fm 20 a, t j = 25 c 1.31 v forward slope resistance r t t j = 150 c 11.88 m ? threshold voltage v f(to) 0.93 v maximum reverse leakage current i rm t j = 25 c v r = rated v rrm 0.1 ma t j = 150 c 6 recovery characteristics parameter symbol test conditions values units reverse recovery time t rr i f at 20 apk 25 a/s ? 25 c 400 ns reverse recovery current i rr 6.1 a reverse recovery charge q rr 1.7 c snap factor s typical 0.6 thermal - mechanical specifications parameter symbol test conditions values units maximum junction and storage ? temperature range t j , t stg -40 to +150 c maximum thermal resistance, ? junction to case r thjc dc operation 2.5 c/w maximum thermal resistance, ? junction to ambient r thja 62 typical thermal resistance, ? case to heatsink r thcs mounting surface, smooth and greased 0.5 approximate weight 2g 0.07 oz. mounting torque minimum 6 (5) kgf cm (lbf in) maximum 12 (10) marking device case style to-220 full-pak 20etf10fp 20etf12fp i fm t rr dir dt i rm(rec) q rr t t a t b
vs-20etf...fppbf series, vs-20etf...fp-m3 series www.vishay.com vishay semiconductors revision: 11-feb-16 3 document number: 93222 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 1 - current rati ng characteristics fig. 2 - current rati ng characteristics fig. 3 - forward power loss characteristics fig. 4 - forward power loss characteristics fig. 5 - maximum non-re petitive surge current fig. 6 - maximum non-re petitive surge current maximum allowable case temperature (c) average forward current (a) 0 4 8 12 16 20 0 40 80 120 160 30 20etf.. s erie s 60 90 120 180 maximum allowable case temperature (c) average forward current (a) 0 5 10 15 20 25 30 35 0 50 100 150 30 20etf.. s erie s 60 180 dc 120 90 10 0 35 0 maximum average forward power loss (w) average forward current (a) 20 25 25 30 20 10 15 5 5 15 conduction angle t j = 150 c rms limit 180 120 90 60 30 ? 10 0 35 0 maximum average forward power loss (w) average forward current (a) 25 25 15 10 20 5 15 5 20 30 rms limit ? conduction period t j = 150 c 180 120 90 60 30 300 50 1 10 100 peak half sine wave forward current (a) number of equal amplitude half cycle current pulses (n) 200 100 150 250 at any rated load condition and w ith rated v rrm applied follo w ing surge. initial t j = 150 c at 60 hz 0.0083 s at 50 hz 0.0100 s 20etf.. series 400 150 50 0.001 0.01 1 peak half sine wave forward current (a) pulse train duration (s) 300 100 200 250 350 550 maximum non-repetiti v e surge current v ersus pulse train duration. 20etf.. series initial t j = 150 c no v oltage reapplied rated v rrm reapplied 0.1 450 500
vs-20etf...fppbf series, vs-20etf...fp-m3 series www.vishay.com vishay semiconductors revision: 11-feb-16 4 document number: 93222 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 7 - forward voltage drop characteristics fig. 8 - recovery time characteristics, t j = 25 c fig. 9 - recovery time characteristics, t j = 150 c fig. 10 - recovery charge characteristics, t j = 25 c fig. 11 - recovery charge characteristics, t j = 150 c 1000 10 1 0 1.0 2.0 instantaneous forward current (a) instantaneous forward voltage (v) 100 3.0 4.0 t j = 25 c t j = 150 c 0.5 1.5 2.5 3.5 0.7 0.5 0 0 50 100 150 200 t rr - typical reverse recovery time (s) di/dt - rate of fall of forward current (a/s) 0.1 0.3 t j = 25 c i fm = 10 a i fm = 5 a i fm = 1 a i fm = 30 a i fm = 20 a 0.2 0.4 0.6 1.2 0 0 50 100 150 200 t rr - typical reverse recovery time (s) di/dt - rate of fall of forward current (a/s) 0.6 0.9 0.3 t j = 150 c i fm = 30 a i fm = 1 a i fm = 20 a i fm = 10 a i fm = 5 a 6 0 0 50 100 150 200 q rr - typical reverse recovery charge (c) di/dt - rate of fall of forward current (a/s) 3 1 2 4 5 t j = 25 c i fm = 30 a i fm = 20 a i fm = 10 a i fm = 5 a i fm = 1 a 0 0 50 100 150 200 q rr - typical reverse recovery charge (c) di/dt - rate of fall of forward current (a/s) 2 4 t j = 150 c 6 8 10 i fm = 30 a i fm = 20 a i fm = 10 a i fm = 5 a i fm = 1 a
vs-20etf...fppbf series, vs-20etf...fp-m3 series www.vishay.com vishay semiconductors revision: 11-feb-16 5 document number: 93222 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 12 - recovery curre nt characteristics, t j = 25 c fig. 13 - recovery current characteristics, t j = 150 c fig. 14 - thermal impedance z thjc characteristics 25 0 0 50 100 150 200 i rr - typical reverse recovery current (a) di/dt - rate of fall of forward current (a/s) 5 15 10 20 t j = 25 c i fm = 30 a i fm = 20 a i fm = 10 a i fm = 5 a i fm = 1 a 35 20 0 0 50 100 150 200 i rr - typical reverse recovery current (a) di/dt - rate of fall of forward current (a/s) 5 10 30 t j = 150 c 15 25 i fm = 30 a i fm = 20 a i fm = 10 a i fm = 5 a i fm = 1 a square wave pulse duration (s) z thjc - transient thermal impedance (k/w) 1e-05 1e-04 1e-03 1e-02 1e-01 1e+00 1e+01 1e+02 0.01 0.1 1 10 s ingle pul s e (thermal re s i s tance) d = 0.02 d = 0.05 d = 0.1 d = 0.2 d = 0.5 d = 0.01
vs-20etf...fppbf series, vs-20etf...fp-m3 series www.vishay.com vishay semiconductors revision: 11-feb-16 6 document number: 93222 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 ordering information table ordering information (example) preferred p/n quantity per t/r minimum order quantity packaging description VS-20ETF10FPPBF 50 1000 anti static plastic tubes vs-20etf10fp-m3 50 1000 anti static plastic tubes vs-20etf12fppbf 50 1000 anti static plastic tubes vs-20etf12fp-m3 50 1000 anti static plastic tubes links to related documents dimensions www.vishay.com/doc?95005 part marking information to-220 fppbf www.vishay.com/doc?95009 to-220 fp-m3 www.vishay.com/doc?95440 1 - current rating (20 = 20 a) - vishay semiconductors product 2 - circuit configuration: e = single diode 3 - package: t = to-220 4 - type of silicon: f = fast soft recovery rectifier 5 - voltage code x 100 = v rrm 6 - full-pak 7 8 - pbf = lead (pb)-free and rohs compliant environmental digit: -m3 = halogen-free, rohs-compliant, and terminations lead (pb)-free 10 = 1000 v 12 = 1200 v device code 5 1 3 2 4 6 7 8 20 vs- e t f 12 fp pbf
outline dimensions www.vishay.com vishay semiconductors revision: 20-jul-11 1 document number: 95005 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 dimensions in millimeters 5 0.5 3.3 3.1 5 0.5 0.9 0.7 2.54 typ. 2.54 typ. 10.6 10.4 3.7 3.2 7.31 6.91 0.61 0.38 2.85 2.65 2.8 2.6 1.4 1.3 10 4.8 4.6 16.0 15.8 16.4 15.4 (2 places) r 0.7 r 0.5 hole ? 3.4 3.1 typ. 1.15 1.05 13.56 13.05 lead assignments diode s 1 + 2 - cathode 3 - anode conforms to jedec outline to-220 full-pak
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